Improved electrical mobilities from implanting InP at elevated temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91033
Reference15 articles.
1. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
2. EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATION
3. Silicon‐ and selenium‐ion‐implanted GaAs reproducibly annealed at temperatures up to 950 °C
4. Influence of implantation temperature and surface protection on tellurium implantation in GaAs
5. The role of elevated temperatures in the implantation of GaAs
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1. Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers;Applied Physics Letters;2005-04-04
2. Low temperature recrystallization of ion implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
3. Annealing and activation of Si implanted InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-07
4. The role of outdiffusion in the activation of high dose Mg implantations in InP;Journal of Electronic Materials;1992-04
5. Room‐temperature annealing of Si implantation damage in InP;Applied Physics Letters;1991-11-11
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