Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides-Reference-Cited by-同舟云学术

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Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Published:2019-02-28 Issue:8 Volume:125 Page:082516
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Huating¹^ORCID,Huang Zongyu¹²,He Chaoyu¹²^ORCID,Wu Yanbing¹,Xue Lin³,Tang Chao¹²,Qi Xiang¹²,Zhong Jianxin¹²

Affiliation:

1. School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People’s Republic of China

2. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, People’s Republic of China

3. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, People’s Republic of China

Funder

Science and Technology Program of Xiangtan

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041486

Reference44 articles.

1. Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

2. Sensing Behavior of Atomically Thin-Layered MoS2 Transistors

3. Two-dimensional atomic crystals

4. MoS 2 -MX 2 in -plane superlattices: Electronic properties and bandgap engineering via strain

5. Control of interlayer physics in 2H transition metal dichalcogenides

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