Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1430262
Reference18 articles.
1. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
2. Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements
3. Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
4. The optical absorption bands and their anisotropy in the various modifications of SiC
5. Optical absorption associated with superlattice in silicon carbide crystals
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