Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC-Reference-Cited by-同舟云学术

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Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC

Published:2001-03 Issue:1-3 Volume:80 Page:357-361
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Weingärtner R.,Bickermann M.,Bushevoy S.,Hofmann D.,Rasp M.,Straubinger T.L.,Wellmann P.J.,Winnacker A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. The optical absorption bands and their anisotropy in the various modifications of SiC

2. Higher Absorption Edges in6HSiC

3. Optical absorption associated with superlattice in silicon carbide crystals

4. P.J. Wellmann, S. Bushevoy, R. Weingärtner, Proceedings of the EXMATEC 2000 Conference, Mater Sci Eng. B (in press).

5. Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes

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4. High Sensitivity Surface Defect Inspection of SiC and SmartSiC<sup>TM</sup> Substrates Using a DUV Laser-Based System;Defect and Diffusion Forum;2023-05-31

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