Photoionization energy variation among three types of As‐stabilized GaAs (001) 2×4 surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107254
Reference12 articles.
1. Optical studies of molecular-beam epitaxy growth of GaAs and AlAs
2. Photoemission oscillations during epitaxial growth
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4. Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxy
5. Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations
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