Effect of nitrogen–oxygen complex on electrical properties of Czochralski silicon-Reference-Cited by-同舟云学术

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Effect of nitrogen–oxygen complex on electrical properties of Czochralski silicon

Published:1996-01-22 Issue:4 Volume:68 Page:487-489
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Deren,Fan Ruixing,Li Liben,Que Duanlin,Sumino Koji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116422

Reference12 articles.

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18

2. Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon;Materials Science in Semiconductor Processing;2023-08

3. Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon;Journal of Applied Physics;2022-04-21

4. The origin of infrared bands in nitrogen-doped Si;Journal of Materials Science;2022-02-18

5. Theoretical investigation of nitrogen-vacancy defects in silicon;AIP Advances;2022-02-01

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