Nature of size effects in compact models of field effect transistors-Reference-Cited by-同舟云学术

Nature of size effects in compact models of field effect transistors

Published:2016-03-07 Issue:9 Volume:119 Page:094505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Torkhov N. A.,Babak L. I.,Kokolov A. A.^ORCID,Salnikov A. S.,Dobush I. M.^ORCID,Novikov V. A.^ORCID,Ivonin I. V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942617

Reference38 articles.

1. Nonlinear Dynamics and Chaos in Semiconductors

2. A. P. Micolich , “ Fractal magnetic-conductance fluctuations in mesoscopic semiconductor billiards,” Ph.D. thesis ( University of New South Wales, UK, 2000).

3. Dependence of fractal conductance fluctuations on soft-wall profile in a double-layer semiconductor billiard

4. Fractality as a new nanotechnological direction of semiconductor material science

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