Kelvin Probe Force Microscopy Study of the Electrostatic System of the Crystal Surface of AuNi/GaN Schottky Diodes-Reference-Cited by-同舟云学术

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Kelvin Probe Force Microscopy Study of the Electrostatic System of the Crystal Surface of AuNi/GaN Schottky Diodes

Published:2020-03 Issue:3 Volume:54 Page:337-344
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Torkhov N. A.,Novikov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S1063782620030185.pdf

Reference36 articles.

1. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3nd ed. (Wiley, New York, 2007), p. 764.

2. R. T. Tung, Appl. Phys. Rev. 1, 011304 (2014).

3. R. T. Tung, Mater. Sci. Eng. R 35, 1 (2001).

4. R. Mamedov, Metal-Semiconductor Contacts with Electric Spots Field (BGU, Baku, 2003) [in Russian].

5. V. G. Bozhkov, Metal-Semiconductor Contacts: Physics and Models (Tomsk. Gos. Univ., Tomsk, 2016) [in Russian].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An experimental study: Dependence of Schottky diode parameters on Schottky contact area size;Optical Materials;2023-08

2. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures;Semiconductor Science and Technology;2022-04-13

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