Study of InAs quantum dots in AlGaAs∕GaAs heterostructure by ballistic electron emission microscopy/spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2760134
Reference21 articles.
1. D. Bimberg, M. Grundman, and N. N. Ledenstov, Quantum Dot Heterostructures (John Wiley & Sons, U.K., 1998), p. 277.
2. Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
3. On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes
4. Hole burning spectroscopy of InAs self-assembled quantum dots for memory application
5. N-electron ground state energies of a quantum dot in magnetic field
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1. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state;Physica E: Low-dimensional Systems and Nanostructures;2013-02
3. Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE;Microelectronics Journal;2009-03
4. Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs∕AlGaAs heterostructure;Applied Physics Letters;2008
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