Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE-Reference-Cited by-同舟云学术

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Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

Published:2009-03 Issue:3 Volume:40 Page:496-498
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Vaniš Jan,Zelinka Jiří,Malina Václav,Henini Mohamed,Pangrác Jiří,Melichar Karel,Hulicius Eduard,Šroubek Filip,Walachová Jarmila

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Quantum Dot Heterostructures;Bimberg,1998

2. Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

3. On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes

4. Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

5. N-electron ground state energies of a quantum dot in magnetic field

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ballistic electron emission microscopy and spectroscopy: Recent results and related techniques;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

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