Electric-field control of spin accumulation signals in silicon at room temperature-Reference-Cited by-同舟云学术

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Electric-field control of spin accumulation signals in silicon at room temperature

Published:2011-09-26 Issue:13 Volume:99 Page:132511
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ando Y.,Maeda Y.,Kasahara K.,Yamada S.,Masaki K.,Hoshi Y.,Sawano K.,Izunome K.,Sakai A.,Miyao M.,Hamaya K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3643141

Reference31 articles.

1. Electronic measurement and control of spin transport in silicon

2. Coherent Spin Transport through a 350 Micron Thick Silicon Wafer

3. Spin Polarized Electron Transport near theSi/SiO2Interface

4. Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

5. Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

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2. Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi;Applied Physics Letters;2021-04-19

3. Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature;Physical Review Applied;2020-04-06

4. Hybrid spintronic materials: Growth, structure and properties;Progress in Materials Science;2019-01

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