Theory of far‐infrared generation by optical mixing and stimulated Raman scattering via spin‐flip transitions in InSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654981
Reference12 articles.
1. Tunable Stimulated Raman Scattering from Mobile Carriers in Semiconductors
2. Tunable Stimulated Raman Scattering from Mobile Carriers in Semiconductors
3. Resonant Optical Nonlinearity Due to Conduction-Electron Spins in InSb
4. Theory of Resonant, Far-Infrared Generation in InSb
5. Parametric amplification near resonance in non-linear dispersive media
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2. Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration;Chinese Physics Letters;2007-07-26
3. Stimulated Raman scattering in a magnetized centrosymmetric semiconductor;Physical Review B;1991-12-15
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5. Stress-induced electric-dipole-allowed far-infrared generation at the spin-resonance frequency in InSb;Physical Review B;1985-08-15
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