Stress-induced electric-dipole-allowed far-infrared generation at the spin-resonance frequency in InSb-Reference-Cited by-同舟云学术

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Stress-induced electric-dipole-allowed far-infrared generation at the spin-resonance frequency in InSb

Published:1985-08-15 Issue:4 Volume:32 Page:2243-2247
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jagannath C.,Aggarwal R. L.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.2243/fulltext

Reference21 articles.

1. Free-Carrier Magneto-Optical Effects in Far-Infrared Difference-Frequency Generation in Semiconductors

2. Resonant Optical Nonlinearity Due to Conduction-Electron Spins in InSb

3. Theory of Resonant, Far-Infrared Generation in InSb

4. Far‐infrared generation from a spin‐flip laser

5. Theory of far‐infrared generation by optical mixing and stimulated Raman scattering via spin‐flip transitions in InSb

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain dependent electron spin dynamics in bulk cubic GaN;Journal of Applied Physics;2015-03-07

2. Electrical Manipulation of Spins in Nonmagnetic Semiconductors;Journal of the Physical Society of Japan;2008-03-15

3. Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers;Applied Physics Letters;2006-06-12

4. Electric-Dipole Spin Resonances;Landau Level Spectroscopy;1991

5. Inversion Asymmetry and Magneto-optics in Semiconductors;High Magnetic Fields in Semiconductor Physics II;1989

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