Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Funder
KACST-KAUST-UCSB Solid State Lighting Program
Solid State Lighting & Energy Electronics Center
National Science Foundation (NSF)
Division of Materials Research (DMR)
National Nanotechnology Initiative (NNI)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4930304
Reference39 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Strain-induced polarization in wurtzite III-nitride semipolar layers
3. High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes
4. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
5. High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates
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