Cotunneling current in Si single-electron transistor based on multiple islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2384802
Reference18 articles.
1. Complementary digital logic based on the ‘‘Coulomb blockade’’
2. Room-temperature single-electron memory
3. Fabrication technique for Si single-electron transistor operating at room temperature
4. Room temperature operation of Si single-electron memory with self-aligned floating dot gate
5. Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process
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