Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substrates-Reference-Cited by-同舟云学术

Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substrates

Published:2017-03-27 Issue:13 Volume:110 Page:133505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Chen¹,June Cho Sang²^ORCID,Hwan Jung Yei²^ORCID,Chang Tzu-Hsuan²,Seo Jung-Hun²^ORCID,Mikael Solomon²,Zhang Yuming¹,Zhang Yi-Men¹,Lu Hongliang¹,Li Guo Xin³,Mi Hongyi²,Zhang Huilong²,Ma Zhenqiang²

Affiliation:

1. School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

2. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, 3445 Engineering Hall, Madison, Wisconsin 53706, USA

3. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4979509

Reference42 articles.

1. Sophisticated skin

2. Inorganic Semiconductors for Flexible Electronics

3. Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

4. All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

5. High mobility nanocrystalline silicon transistors on clear plastic substrates

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