High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure
Author:
Affiliation:
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China
2. Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China
Funder
Chinese National Key Basic Research Special Fund
National High Technology Research and Development Program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903883
Reference22 articles.
1. 100-W+ diode laser bars show > 71% power conversion from 790- nm to 1000-nm and have clear route to > 85%
2. 73% CW power conversion efficiency at 50 W from 970 nm diode laser bars
3. Reliability and performance of 808-nm single emitter multi-mode laser diodes
4. Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power
5. Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure
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