Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions-Reference-Cited by-同舟云学术

Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

Published:2012-04 Issue:7 Volume:111 Page:07C903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Honjo H.,Fukami S.,Suzuki T.,Nebashi R.,Ishiwata N.,Miura S.,Sakimura N.,Sugibayashi T.,Kasai N.,Ohno H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3671437

Reference8 articles.

1. Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs

2. Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

3. MRAM Cell Technology for Over 500-MHz SoC

4. N. Sakimura, T. Sugibayashi, R. Nebashi, H. Honjo, S. Saito, Y. Kato, and N. Kasai, IEEE Asian Solid-State Circuits Conf. Proc. Tech. Pap. (2007), pp. 216–219.

5. N. Sakimura, R. Nebashi, H. Honjo, S. Saito, Y. Kato, and T. Sugibayashi, IEEE Asian Solid-State Circuits Conf. Proc. Tech. Pap. (2008), p. 261.

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