Beyond MRAM: Nonvolatile Logic-in-Memory VLSI-Reference-Cited by-同舟云学术

Beyond MRAM: Nonvolatile Logic-in-Memory VLSI

Published:2016-11-26 Issue: Volume: Page:199-230
ISSN:
Container-title:Introduction to Magnetic Random&;#x02010;Access Memory
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Author:

Hanyu Takahiro¹²³,Endoh Tetsuo¹²⁴,Ikeda Shoji¹²,Sugibayashi Tadahiko⁵,Kasai Naoki¹,Suzuki Daisuke⁶,Natsui Masanori³,Koike Hiroki¹,Ohno Hideo²⁷

Affiliation:

1. Center for Innovative Integrated Electronics Systems; Tohoku University; Sendai Japan

2. Center for Spintronics Integrated Systems; Tohoku University; Sendai Japan

3. Laboratory for Brainware Systems; RIEC, Tohoku University; Sendai Japan

4. Department of Electrical Engineering; Tohoku University; Sendai Japan

5. System Platform Research Laboratories, NEC Corporation; Tsukuba Japan

6. Frontier Research Institute for Interdisciplinary Sciences; Tohoku University; Sendai Japan

7. Laboratory for Nanoelectronics and Spintronics; RIEC, Tohoku University; Sendai Japan

Publisher

John Wiley &;#38; Sons, Inc.

Reference44 articles.

1. Magnetic tunnel junctions for spintronic memories and beyond;Ikeda;IEEE Trans. Elect. Dev,2007

2. Domain&;#x02010;wall&;#x02010;motion cell with perpendicular anisotropy wire and in&;#x02010;plane magnetic tunneling junctions;Honjo;J. Appl. Phys,2012

3. H. Ohno T. Endoh T. Hanyu N. Kasai S. Ikeda 2010 IEEE International Electron Devices Meeting (IEDM), Technical Digest 9.4.1 9.4.4 2010

4. S. Ikeda H. Sato H. Honjo E. C. I. Enobio S. Ishikawa M. Yamanouchi S. Fukami S. Kanai F. Matsukura T. Endoh H. Ohno 2014 IEEE International Electron Devices Meeting (IEDM) 33.2.1 33.2.4 2014

5. H. Ohno S. Fukami IEEE Intermag Conference 2015

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