Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
Author:
Funder
U.S. Department of Energy
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3580628
Reference38 articles.
1. III-Nitride Photonics
2. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
3. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
4. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
5. Origin of efficiency droop in GaN-based light-emitting diodes
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