Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors
Author:
Affiliation:
1. Taiwan Semiconductor Manufacturing Company, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu 300-75, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference14 articles.
1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
2. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
3. Experimental determination of electron and hole mobilities in MOS accumulation layers
4. Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET's
5. Electron mobility in n-channel depletion-type MOS transistors
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