An atomic force microscopy-based method for line edge roughness measurement
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4794368
Reference24 articles.
1. Determination of the line edge roughness specification for 34 nm devices
2. Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors
3. Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
4. Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy
5. Characterization of surface topography by SEM and SFM: problems and solutions
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