Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory
Author:
Affiliation:
1. Spin Memory Inc., Fremont, California 94538, USA
2. Center for Quantum Phenomena, Department of Physics, New York University, 726 Broadway, New York, New York 10003, USA
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0075945
Reference82 articles.
1. Nobel Lecture: Origin, development, and future of spintronics
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5. 12 Gb/in/sup 2/ recording demonstration with SV read heads and conventional narrow pole-tip write heads
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