Structural analysis of Au–Ni–Ge and Au–Ag–Ge alloyed ohmic contacts on modulation‐doped AlGaAs–GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337413
Reference9 articles.
1. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
2. Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds
3. Two-dimensional electron gas at a semiconductor-semiconductor interface
4. Negative differential resistance through real‐space electron transfer
5. A field-effect transistor with a negative differential resistance
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1. Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas;Applied Physics Letters;2024-08-12
2. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure;The European Physical Journal Applied Physics;2020-02
3. Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs;Materials Science in Semiconductor Processing;2015-02
4. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures;Semiconductor Science and Technology;2013-01-03
5. Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires;Applied Physics Letters;2012-01-23
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