Evolution of the defect structure in helium implanted SiGe∕Si heterostructures investigated by in situ annealing in a transmission electron microscope
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1852705
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1. Strained-Si channel heterojunction p-MOSFETs
2. Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
3. Strain relaxation of pseudomorphic heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication
4. Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates
5. Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures
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1. Dynamic behavior of helium bubbles at high temperature in Si studied by in situ TEM, STEM-EELS, and TDS;Journal of Applied Physics;2019-10-07
2. In Situ Transmission Electron Microscopy;Springer Handbook of Microscopy;2019
3. Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells;Solar Energy Materials and Solar Cells;2016-01
4. Influence of He implantation dose on strain relaxation of pseudomorphic SiGe/Si heterostructure;Thin Solid Films;2013-09
5. Nanoscale organization by elastic interactions between H and He platelets in Si;Journal of Applied Physics;2013-08-21
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