Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1699488
Reference16 articles.
1. High electron mobility in modulation‐doped Si/SiGe
2. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
3. Crystal Interfaces. Part I. Semi‐Infinite Crystals
4. Crystal Interfaces. Part II. Finite Overgrowths
5. Dislocations in strained-layer epitaxy: theory, experiment, and applications
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