Growth of a novel InAs‐GaAs strained layer superlattice on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95542
Reference6 articles.
1. A New High-Electron Mobility Monolayer Superlattice
2. Strained‐layer superlattices from lattice mismatched materials
3. Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices
4. Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions grown by molecular beam epitaxy
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