Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission

Author:

Wang Xuanhao1,Shang Chenglin1,Pan An1,Cheng Xingran1,Gui Tao2,Yuan Shuai2,Gui Chengcheng3,Zheng Keshuang2,Zhang Peijie3,Song Xiaolu3,Li Yanbo2,Li Liangchuan2,Zeng Cheng1,Xia Jinsong1ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. Huawei Technologies, Optical R&D Department, Dongguan 523000, China

3. Huawei Technologies, B & P Laboratory, Shenzhen 518000, China

Abstract

We successfully demonstrate a monolithic integrated dual-polarization in-phase/quadrature (IQ) modulator based on thin-film lithium niobate platform with a silicon substrate, which consists of IQ modulators, spot-size converters, and a polarization rotator combiner. When coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

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