Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission-Reference-Cited by-同舟云学术

Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission

Published:2022-07-01 Issue:7 Volume:7 Page:076101
ISSN:2378-0967
Container-title:APL Photonics
language:en
Short-container-title:APL Photonics

Author:

Wang Xuanhao¹,Shang Chenglin¹,Pan An¹,Cheng Xingran¹,Gui Tao²,Yuan Shuai²,Gui Chengcheng³,Zheng Keshuang²,Zhang Peijie³,Song Xiaolu³,Li Yanbo²,Li Liangchuan²,Zeng Cheng¹,Xia Jinsong¹^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. Huawei Technologies, Optical R&D Department, Dongguan 523000, China

3. Huawei Technologies, B & P Laboratory, Shenzhen 518000, China

Abstract

We successfully demonstrate a monolithic integrated dual-polarization in-phase/quadrature (IQ) modulator based on thin-film lithium niobate platform with a silicon substrate, which consists of IQ modulators, spot-size converters, and a polarization rotator combiner. When coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0097296

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