Towards High-Performance Pockels Effect-Based Modulators: Review and Projections

Author:

Li Yu12,Sun Muhan1,Miao Ting1,Chen Jianping12

Affiliation:

1. State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

2. SJTU-Pinghu Institute of Intelligent Optoelectronics, Pinghu 314200, China

Abstract

The ever-increasing demand for high-speed data transmission in telecommunications and data centers has driven the development of advanced on-chip integrated electro-optic modulators. Silicon modulators, constrained by the relatively weak carrier dispersion effect, face challenges in meeting the stringent requirements of next-generation photonic integrated circuits. Consequently, there has been a growing interest in Pockels effect-based electro-optic modulators, leveraging ferroelectric materials like LiNbO3, BaTiO3, PZT, and LaTiO3. Attributed to the large first-order electro-optic coefficient, researchers have delved into developing modulators with expansive bandwidth, low power consumption, compact size, and linear response. This paper reviews the working principles, fabrication techniques, integration schemes, and recent highlights in Pockels effect-based modulators.

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

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