A new maskless selective‐growth process for InP on (100) Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352201
Reference9 articles.
1. The effect of reduced growth area by substrate patterning on misfit accommodation in molecular beam epitaxially grown InxGa1−xAs/GaAs
2. Selective‐area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air
3. Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE
4. Selected-area GaAs epitaxial growth on Si free from detrimental sidewall interactions
5. Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
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1. Si(100) Surfaces in Chemical Vapor Environments;GaP Heteroepitaxy on Si(100);2013
2. Investigation of oxide removal from Si(100) substrates in dependence of the MOVPE process gas ambient;Journal of Crystal Growth;2011-03
3. Growth of high quality InP layers in STI trenches on miscut Si (001) substrates;Journal of Crystal Growth;2011-01
4. Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment;Journal of Crystal Growth;2011-01
5. Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates;ECS Transactions;2010-11-23
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