Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4762003
Reference18 articles.
1. High performance germanium MOSFETs
2. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
3. Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation
4. Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n+/p Junction
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