Double‐heterostructure optoelectronic switch as a single quantum well laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102503
Reference8 articles.
1. A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy
2. Optoelectronic transient response of ann‐channel double heterostructure optoelectronic switch
3. High Speed Response in Optoelectronic Gated Thyristor
4. Differential optical comparator using parallel connected AlGaAs pnpn optical switches
5. Ultralow‐threshold graded‐index separate‐confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings
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1. Planar-Doped-Barrier Switch;Complete Guide to Semiconductor Devices;2010-11-03
2. Optoelectronic Devices;Handbook of Compound Semiconductors;1995
3. Differential opticalPnpNswitch operating at 16 MHz with 250‐fJ optical input energy;Applied Physics Letters;1994-07-04
4. Electrical and optical properties of the four-terminal double-heterostructure opto-electronic switch;IEEE Transactions on Electron Devices;1993-06
5. Characteristics of modulation-doped quantum well lasers grown by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
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