Electrical and optical properties of the four-terminal double-heterostructure opto-electronic switch
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/5604/00214731.pdf?arnumber=214731
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 μm;Applied Physics Letters;2003-01-13
2. Spontaneous oscillations in the InP-InGaAsP lasing optoelectronic switch (LOES);IEEE Journal of Quantum Electronics;1995-07
3. Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS);Thin Solid Films;1995-02
4. Strained layer (1.5 /spl mu/m) InP/InGaAsP lasing opto-electronic switch (LOES);IEEE Photonics Technology Letters;1994-08
5. GaAs bidirectional bistability switch using double triangular barrier structures;Journal of Applied Physics;1994-03
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