Silicon doping in InP grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94503
Reference10 articles.
1. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
2. MBE-grown InGaAs/InP BH lasers with LPE burying layers
3. Homoepitaxial molecular beam growth of InP on thermally cleaned {100} oriented substrates
4. 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
5. Molecular‐beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy;Journal of Crystal Growth;1998-09
2. Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source;Japanese Journal of Applied Physics;1991-12-30
3. Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure;Journal of Crystal Growth;1989-03
4. Influence of growth conditions on undoped and sulfur‐doped InP grown by molecular‐beam epitaxy;Journal of Applied Physics;1986-07
5. Doping studies for InP grown by organometallic vapor phase epitaxy;Journal of Crystal Growth;1986-04
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