High-β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots

Author:

Gaur Kartik1ORCID,Shih Ching-Wen1ORCID,Limame Imad1ORCID,Koulas-Simos Aris1ORCID,Heermeier Niels1ORCID,Palekar Chirag C.1ORCID,Tripathi Sarthak1,Rodt Sven1ORCID,Reitzenstein Stephan1ORCID

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin , Hardenbergstraße 36, D-10623 Berlin, Germany

Abstract

We report an easy-to-fabricate microcavity design to produce optically pumped high-β quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity system, which includes an upper dielectric distributed Bragg reflector (DBR) as a promising alternative to conventional III–V semiconductor DBRs. The cavities show distinct emission features with a characteristic photonic-defect size-dependent mode separation and Q-factors up to 17 000. Comprehensive investigations further reveal lasing operation with a systematic increase (decrease) of the β-factor (threshold pump power) with the number of mirror pairs in the upper dielectric DBR. Notably, due to the quasi-planar device geometry, the microlasers show high temperature stability, evidenced by the absence of temperature-induced redshift of emission energy and linewidth broadening typically observed for nano- and microlasers at high excitation powers. The device exhibits remarkable lasing performance, maintaining efficacy even under elevated temperatures of up to 260 K.

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

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