Selective wet etching of GaAs on AlxGa1−xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368571
Reference13 articles.
1. Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma exposure
2. Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer
3. Characterization of GaAs/AlxGa1−xAs selective reactive ion etching in SiCl4/SiF4 plasmas
4. Damage studies of dry etched GaAs recessed gates for field effect transistors
5. Optical waveguides in GaAs–AlGaAs epitaxial layers
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