Electric field effect on the carrier capture of deep traps in p-type InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3392798
Reference31 articles.
1. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
2. Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor
3. Electric field effect on the thermal emission of traps in semiconductor junctions
4. Evidence for two distinct defects contributing to theH4deep-level transient spectroscopy peak in electron-irradiated InP
5. Effect of carrier concentration on the properties of irradiation‐induced defects inp‐type indium phosphide grown by metalorganic chemical vapor deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance;IEEE Transactions on Electron Devices;2023-06
2. Mechanisms for Radiation Resistance of InP Photovoltaic Cells: A First Principle Study;Solar RRL;2023-01-12
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