Effect of carrier concentration on the properties of irradiation‐induced defects inp‐type indium phosphide grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351386
Reference24 articles.
1. Mechanism for radiation resistance of InP solar cells
2. Electron irradiation induced deep levels inp‐InP
3. Electron irradiation defects in InP
4. A model of deep center formation and reactions in electron irradiated InP
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2. Electric field effect on the carrier capture of deep traps in p-type InP;Journal of Applied Physics;2010-04-15
3. Electric field effect on the emission rate of H4F and H4S hole traps in InP;Journal of Applied Physics;2009-05-15
4. BAC-MP4 Predictions of Thermochemistry for Gas-Phase Indium Compounds in the In−H−C−O−Cl System;The Journal of Physical Chemistry A;2005-12-08
5. Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP;Journal of Applied Physics;2000-07-15
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