Low‐temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112185
Reference10 articles.
1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH
2. Liquid‐metal‐mediated homoepitaxial film growth of Ge at low temperature
3. Surfactant Epitaxy of Si on Si(111) Mediated by Sn
4. Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flow
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