Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366613
Reference17 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
2. GaN FETs for microwave and high-temperature applications
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
5. Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition
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