Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1891291
Reference17 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Transport evidence for pressure-induced superconductivity in CePd2Si2
3. Preparation and optical properties of Ga1−xInxN thin films
4. Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
5. Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering
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