Effects of O vacancies and C doping on dielectric properties of ZrO2: A first-principles study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2388146
Reference19 articles.
1. Materials Fundamentals of Gate Dielectrics
2. High-κ Dielectric Materials for Microelectronics
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
5. ZrO2Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
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