Enhancement of the performance of GaN IMPATT diodes by negative differential mobility
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4948703
Reference38 articles.
1. Tunable, continuous-wave Terahertz photomixer sources and applications
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