High‐field tunneling calculations in metal‐oxide‐silicon capacitors incorporating the perimeter effect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336730
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1. Minority Carriers Induced Schottky Barrier Height Modulation in Current Behavior of Metal-Oxide-Semiconductor Tunneling Diode;ECS Journal of Solid State Science and Technology;2014
2. Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim current injection;Nanotechnology;2003-12-03
3. Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell;IEEE Transactions on Electron Devices;1999-05
4. Numerical Analysis of Tunneling Current due to Electric Field Concentration at Gate Edge of Polysilicon/SiO2/Silicon Structures;Japanese Journal of Applied Physics;1994-01-30
5. Oxide breakdown in a metal-SiO2-Si capacitor: influence of the metal electrode;IEE Proceedings G Circuits, Devices and Systems;1990
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