Anomalous co‐diffusion effects of germanium on group III and V dopants in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99447
Reference8 articles.
1. The diffusion of germanium in silicon
2. Investigations by SIMS of the bulk impurity diffusion of Ge in Si
3. Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics
4. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
5. On models of phosphorus diffusion in silicon
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