Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices-Reference-Cited by-同舟云学术

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Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices

Published:2015-01-05 Issue:1 Volume:106 Page:012107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kawaguchi Kenichi¹,Sudo Hisao²,Matsuda Manabu²,Takemoto Kazuya²,Yamamoto Tsuyoshi²,Arakawa Yasuhiko¹³

Affiliation:

1. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

2. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

3. Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905555

Reference33 articles.

1. Optically Bright Quantum Dots in Single Nanowires

2. Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy

3. Few Electron Double Quantum Dots in InAs/InP Nanowire Heterostructures

4. Growth and Characterization of InP Nanowires with InAsP Insertions

5. Single Quantum Dot Nanowire LEDs

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1. The structural, electronic and optical properties of novel GaP/ZnS/AlP multilayer heterostructure: first-principles study;Materials Research Express;2019-07-24

2. Photoresponse and Field Effect Transport Studies in InAsP–InP Core–Shell Nanowires;Electronic Materials Letters;2018-03-03

3. Chapter 11: InP-Related Nanowires for Light-Emitting Applications;Novel Compound Semiconductor Nanowires;2016-08-30

4. Growth of III-V semiconductor nanowires and their heterostructures;Science China Materials;2016-01

5. Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System;Nano Letters;2015-12-31

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