Growth and Characterization of InP Nanowires with InAsP Insertions-Reference-Cited by-同舟云学术

Growth and Characterization of InP Nanowires with InAsP Insertions

Published:2007-05-05 Issue:6 Volume:7 Page:1500-1504
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tchernycheva Maria¹,Cirlin George E.¹,Patriarche Gilles¹,Travers Laurent¹,Zwiller Valery¹,Perinetti Umberto¹,Harmand Jean-Christophe¹

Affiliation:

1. CNRS-LPN, Route de Nozay, 91460 Marcoussis, France, St. Petersburg Physics and Technology Center for Research and Education RAS, Khlopina 8/3, 195220, St. Petersburg, Russia, and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl070228l

Reference17 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Growth of nanowire superlattice structures for nanoscale photonics and electronics

3. Epitaxial core–shell and core–multishell nanowire heterostructures

4. Improved Subthreshold Slope in an InAs Nanowire Heterostructure Field-Effect Transistor

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