Physical processes in degradation of amorphous Si:H
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96687
Reference9 articles.
1. Theory of recombination-enhanced defect reactions in semiconductors
2. Recombination enhanced defect reactions
3. Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon
4. Carrier lifetime model for the optical degradation of amorphous silicon solar cells
5. Kinetics of the metastable optically induced ESR ina-Si:H
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical equilibrium description of stable and metastable defect structures ina-Si:H;Physical Review B;1994-01-15
2. Thermal and Optical Stretched Exponentials in Defect Kinetics in a-Si:H;MRS Proceedings;1993-01-01
3. Intensity and temperature dependence of the steady-state light-induced defect density ina-Si:H;Physical Review B;1991-12-15
4. Persistent photoconductance in doping-modulated and compensateda-Si:H;Physical Review B;1991-09-15
5. Molecular-dynamics simulations of the stability of amorphous silicon;Physical Review B;1991-01-15
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