Localized epitaxial growth of hexagonal and tetragonal MoSi2on (111) Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95760
Reference21 articles.
1. Fundamental limitations in microelectronics—I. MOS technology
2. Formation and structure of epitaxial NiSi2 and CoSi2
3. Epitaxial Growth of FeSi2 on (111)Si
4. Interfacial reactions of iron thin films on silicon
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3. Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces;Physical Review B;2017-02-22
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