Author:
Cheng H.C.,Chen L.J.,Your T.R.
Abstract
ABSTRACTIsothermal annealing, two step annealing and ion beam mixing were performed to induce interfacial reactions between iron thin films and silicon substrate. Both orthorhombic and tetragonal FeSi2 were found to grow epitaxially on (lll)Si with orthorhombic FeSi2 being the predominant phase. No epitaxial growth of FeSi2 on (001)Si was detected. Epitaxial islands as large as 40 μm in size were formed by a scheme combining ion beam mixing and two step annealing.
Publisher
Springer Science and Business Media LLC
Cited by
19 articles.
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